IRF7335D1 Ver la hoja de datos (PDF) - International Rectifier
Número de pieza
componentes Descripción
Lista de partido
IRF7335D1 Datasheet PDF : 12 Pages
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Q1 - Control FET
Typical Characteristics
IRF7335D1
Q2 - Synchronous FET & Schottky
2500
2000
1500
VGS = 0V, f = 1 MHZ
C iss = C gs + C gd , C ds
SHORTED
Crss = Cgd
Coss = Cds + Cgd
Ci s s
1000
500
Coss
Crs s
0
1
10
100
VDS, Drain-to-Source Voltage (V)
Fig 13. Typical Capacitance Vs.Drain-to-Source Voltage
12
ID= 8.0A
10
VDS= 24V
VDS= 15V
8
6
4
2
0
0
5 10 15 20 25 30
QG Total Gate Charge (nC)
Fig. 15. Gate-to-Source Voltage vs Typical Gate Charge
1000
100
OPERATION IN THIS AREA
LIMITED BY RDS(on)
4000
3500
3000
2500
2000
VGS = 0V, f = 1 MHZ
C iss
= Cgs + Cgd , C ds
SHORTED
Crss = Cgd
Coss = Cds + Cgd
Ciss
1500
1000
500
Coss
Crss
0
1
10
100
VDS, Drain-to-Source Voltage (V)
Fig 14. Typical Capacitance Vs.Drain-to-Source Voltage
12
ID= 8.0A
10
VDS= 24V
VDS= 15V
8
6
4
2
0
0
5
10 15 20 25 30
QG Total Gate Charge (nC)
Fig. 16. Gate-to-Source Voltage vs Typical Gate Charge
1000
100
OPERATION IN THIS AREA
LIMITED BY RDS(on)
10
100µsec
1msec
1
Tc = 25°C
Tj = 150°C
Single Pulse
0.1
0.1
1.0
10msec
10.0
100.0 1000.0
VDS , Drain-toSource Voltage (V)
Fig 17. Maximum Safe Operating Area
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10
100µsec
1msec
1
Tc = 25°C
Tj = 150°C
Single Pulse
0.1
0.1
1.0
10msec
10.0
100.0 1000.0
VDS , Drain-toSource Voltage (V)
Fig 18. Maximum Safe Operating Area
5
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