BSS84PW16327XT Ver la hoja de datos (PDF) - Infineon Technologies

Número de pieza

componentes Descripción

Lista de partido

BSS84PW16327XT

SIPMOS Small-Signal-Transistor

Infineon Technologies 

Thermal Characteristics

Parameter

Characteristics

Thermal resistance, junction - soldering point

(Pin 3)

SMD version, device on PCB:

@ min. footprint

@ 6 cm2 cooling area 1)

BSS84PW

Symbol

Values

Unit

min. typ. max.

RthJS

RthJA

-

- 110 K/W

-

- 420

-

- 350

Electrical Characteristics, at Tj = 25 °C, unless otherwise specified

Parameter

Symbol

Values

Unit

min. typ. max.

Static Characteristics

Drain-source breakdown voltage

VGS = 0 V, ID = -250 µA

Gate threshold voltage, VGS = VDS

ID = -20 µA

Zero gate voltage drain current

VDS = -60 V, VGS = 0 V, Tj = 25 °C

VDS = -60 V, VGS = 0 V, Tj = 125 °C

V(BR)DSS -60

-

-V

VGS(th)

-1 -1.5 -2

IDSS

µA

- -0.1 -1

-

-10 -100

Gate-source leakage current

VGS = -20 V, VDS = 0 V

Drain-source on-state resistance

VGS = -2.7 V, ID = -0.01 A

Drain-source on-state resistance

VGS = -4.5 V, ID = -0.12 A

Drain-source on-state resistance

VGS = -10 V, ID = -0.15 A

IGSS

RDS(on)

RDS(on)

RDS(on)

-

-10 -100 nA

- 10.5 25 W

-

6.9 12

-

4.6

8

1Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm2 (one layer, 70 µm thick) copper area for drain

connection. PCB is vertical without blown air.

Rev 2.0

Page 2

2016-06-21

Share Link: