BSS84PW16327XT Ver la hoja de datos (PDF) - Infineon Technologies

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BSS84PW16327XT

SIPMOS Small-Signal-Transistor

Infineon Technologies 

Drain-source on-resistance

RDS(on) = f(Tj)

parameter: ID = -0.17A, VGS = -10 V

16

W

12

10

max.

8

6

typ.

4

2

0

-60

-20

20

60

100 °C 160

Tj

Typ. capacitances

C = f(VDS)

Parameter: VGS=0 V, f=1 MHz

10 2

BSS84PW

Gate threshold voltage

VGS(th) = f (Tj)

parameter: VGS = VDS, ID = -20 µA

-2.5

V

max.

-1.5

typ.

-1.0

min.

-0.5

0.0

-60 -20

20

60 100 °C 180

Tj

Forward characteristics of reverse diode

IF = f (VSD)

parameter: Tj , tp = 80 µs

-10 0 BSS84PW

pF

Ciss

A

-10 -1

10 1

Coss

10 0

0

-5

Rev 2.0

Crss

-10 -15 -20

V

-30

VDS

Page 6

-10 -2

Tj = 25 °C typ

Tj = 150 °C typ

Tj = 25 °C (98%)

Tj = 150 °C (98%)

-10 -3

0.0 -0.4 -0.8 -1.2 -1.6 -2.0 -2.4 V -3.0

VSD

2016-06-21

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