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DCR1003SF

Phase Control Thyristor

Dynex Semiconductor 

DCR1003SF

DYNAMIC CHARACTERISTICS

Symbol

Parameter

Conditions

Typ. Max. Units

I /I

RRM DRM

dV/dt

dI/dt

VT(TO)

r

T

tgd

tq

Peak reverse and off-state current

At V /V , T = 125oC

-

RRM DRM case

Maximum linear rate of rise of off-state voltage To 67% VDRM Tj = 125oC.

-

Rate of rise of on-state current

From 67% VDRM to 1000A Repetitive 50Hz -

Gate source 1.5A

tr = 0.5µs. Tj = 125oC.

Non-repetitive -

Threshold voltage

At Tvj = 125oC

-

On-state slope resistance

Delay time

Turn-off time

At T = 125oC

-

vj

VD = 67% VDRM, Gate source 30V, 15Ω

Rise time 0.5µs, Tj = 25oC

-

I = 800A, t = 1ms, T = 125˚C,

T

p

j

VRM = 50V, dIRR/dt = 20A/µs,

110

V

DR

=

50%

V,

DRM

dV /dt

DR

=

20V/µs

linear

100 mA

1000 V/µs

500 A/µs

1000 A/µs

0.86 V

0.25 mΩ

1.1

µs

200 µs

IL

Latching current

IH

Holding current

Tj = 25oC, VD = 5V

Tj = 25oC, Rg-k = ∞

-

350 mA

-

230 mA

GATE TRIGGER CHARACTERISTICS AND RATINGS

Symbol

Parameter

VGT

I

GT

VGD

IGD

V

FGM

VFGN

VRGM

IFGM

P

GM

PG(AV)

Gate trigger voltage

Gate trigger current

Gate non-trigger voltage

Gate non-trigger current

Peak forward gate voltage

Peak forward gate voltage

Peak reverse gate voltage

Peak forward gate current

Peak gate power

Mean gate power

Conditions

VDRM = 5V, Tcase = 25oC

VDRM = 5V, Tcase = 25oC

At 67% VDRM Tcase = 125oC

At 67% VDRM Tcase = 125oC

Anode positive with respect to cathode

Anode negative with respect to cathode

Anode positive with respect to cathode

See table, gate characteristics curve

Max. Units

3.5

V

200 mA

0.25 V

-

A

30

V

0.25 V

5

V

30

A

150 W

10

W

4/8

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