DCR1003SF Ver la hoja de datos (PDF) - Dynex Semiconductor
Número de pieza
componentes Descripción
Lista de partido
DCR1003SF Datasheet PDF : 8 Pages
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DCR1003SF
CURVES
5000
Measured under
pulse conditions
4000
3000
2000
1000
1
2
3000
2500
2000
1: Tj = 125˚C Min
2: Tj = 125˚C Max
1500
1000
500
0
0.5
1.0
1.5
2.0
2.5
00
Instantaneous on-state voltage, VT - (V)
Fig.2 Maximum (limit) on-state characteristics
VTM Equation:-
VTM = A + Bln (IT) + C.IT+D.√IT
Where
A = –1.191257
B = 0.4149874
C = 3.623888 x 10–4
D = –0.02991257
these values are valid for Tj = 125˚C for IT 500A to 5000A
D.C.
Half wave
3 Phase
6 Phase
500
1000
1500
2000
Mean current, IT(AV) - (A)
2500
Fig.3 Dissipation curves
5/8
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