MMDF2C03HD Ver la hoja de datos (PDF) - Motorola => Freescale

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MMDF2C03HD

Complementary TMOS Field Effect Transistors

Motorola => Freescale 

MMDF2C03HD

ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)(1)

Characteristic

Symbol Polarity Min

OFF CHARACTERISTICS

Drain–Source Breakdown Voltage

(VGS = 0 Vdc, ID = 250 µAdc)

V(BR)DSS

—

30

Zero Gate Voltage Drain Current

(VDS = 30 Vdc, VGS = 0 Vdc)

IDSS

(N)

—

(P)

—

Gate–Body Leakage Current (VGS = ± 20 Vdc, VDS = 0)

ON CHARACTERISTICS(2)

IGSS

—

—

Gate Threshold Voltage

(VDS = VGS, ID = 250 µAdc)

VGS(th)

(N)

1.0

(P)

1.0

Drain–to–Source On–Resistance

(VGS = 10 Vdc, ID = 3.0 Adc)

(VGS = 10 Vdc, ID = 2.0 Adc)

RDS(on)

(N)

—

(P)

—

Drain–to–Source On–Resistance

(VGS = 4.5 Vdc, ID = 1.5 Adc)

(VGS = 4.5 Vdc, ID = 1.0 Adc)

RDS(on)

(N)

—

(P)

—

Forward Transconductance

(VDS = 3.0 Vdc, ID = 1.5 Adc)

(VDS = 3.0 Vdc, ID = 1.0 Adc)

gFS

(N)

2.0

(P)

2.0

DYNAMIC CHARACTERISTICS

Input Capacitance

Output Capacitance

Transfer Capacitance

(VDS = 24 Vdc, VGS = 0

Vdc,

f = 1.0 MHz)

Ciss

Coss

Crss

(N)

—

(P)

—

(N)

—

(P)

—

(N)

—

(P)

—

SWITCHING CHARACTERISTICS(3)

Turn–On Delay Time

Rise Time

(VDD = 15 Vdc, ID = 3.0

Adc,

VGS = 4.5 Vdc,

RG = 9.1 Ω)

td(on)

tr

(N)

—

(P)

—

(N)

—

(P)

—

Turn–Off Delay Time

Fall Time

(VDD = 15 Vdc, ID = 2.0

Adc,

VGS = 4.5 Vdc,

RG = 6.0 Ω)

td(off)

tf

(N)

—

(P)

—

(N)

—

(P)

—

Turn–On Delay Time

Rise Time

(VDD = 15 Vdc, ID = 3.0

Adc,

VGS = 10 Vdc,

RG = 9.1 Ω)

td(on)

tr

(N)

—

(P)

—

(N)

—

(P)

—

Turn–Off Delay Time

Fall Time

(VDD = 15 Vdc, ID = 2.0

Adc,

VGS = 10 Vdc,

RG = 6.0 Ω)

td(off)

tf

(N)

—

(P)

—

(N)

—

(P)

—

Total Gate Charge

Gate–Source Charge

QT

(VDS = 10 Vdc, ID = 3.0 Adc,

Q1

VGS = 10 Vdc)

(N)

—

(P)

—

(N)

—

(P)

—

Gate–Drain Charge

(VDS = 24 Vdc, ID = 2.0 Adc,

Q2

VGS = 10 Vdc)

Q3

(N)

—

(P)

—

(N)

—

(P)

—

(1) Negative signs for P–Channel device omitted for clarity.

(2) Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2%.

(3) Switching characteristics are independent of operating junction temperature.

Typ

Max

Unit

Vdc

—

—

—

1.0

µAdc

—

1.0

—

100

nAdc

1.7

1.5

0.06

0.17

0.065

0.225

3.6

3.4

3.0

2.0

0.070

0.200

0.075

0.300

—

—

Vdc

Ohm

Ohm

mhos

450

630

pF

397

550

160

225

189

250

35

70

64

126

12

24

ns

16

32

65

130

18

36

16

32

63

126

19

38

194

390

8.0

16

9.0

18

15

30

10

20

30

60

81

162

23

46

192

384

11.5

16

nC

14.2

19

1.5

—

1.1

—

3.5

—

4.5

—

2.8

—

3.5

—

(continued)

2

Motorola TMOS Power MOSFET Transistor Device Data

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