MMDF2C03HD Ver la hoja de datos (PDF) - Motorola => Freescale
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MMDF2C03HD Datasheet PDF : 12 Pages
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ELECTRICAL CHARACTERISTICS — continued (TA = 25°C unless otherwise noted)(1)
Characteristic
Symbol Polarity Min
SOURCE–DRAIN DIODE CHARACTERISTICS (TC = 25°C)
Forward Voltage(2)
(IS = 3.0 Adc, VGS = 0 Vdc)
(IS = 2.0 Adc, VGS = 0 Vdc)
Reverse Recovery Time
VSD
trr
(N)
—
(P)
—
(N)
—
(P)
—
(IF = IS,
dIS/dt = 100 A/µs)
ta
(N)
—
(P)
—
tb
(N)
—
(P)
—
Reverse Recovery Storage Charge
QRR
(N)
—
(P)
—
(1) Negative signs for P–Channel device omitted for clarity.
(2) Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2%.
MMDF2C03HD
Typ
Max
Unit
0.82
1.2
Vdc
1.82
2.0
24
—
ns
42
—
17
—
16
—
7.0
—
26
—
0.025
—
µC
0.043
—
TYPICAL ELECTRICAL CHARACTERISTICS
N–Channel
P–Channel
6
VGS = 10 V
5 4.5 V
4.3 V
4 4.1 V
3.9 V
3.7 V
3.5 V
3.3 V
TJ = 25°C
4
VGS = 10 V 4.5 V
3.9 V
3
3.7 V 3.5 V TJ = 25°C
3.3 V
3
3.1 V
2
3.1 V
2
2.9 V
1
0
0 0.2 0.4 0.6 0.8
2.7 V
2.5 V
1 1.2 1.4 1.6 1.8 2
VDS, DRAIN–TO–SOURCE VOLTAGE (VOLTS)
Figure 1. On–Region Characteristics
2.9 V
1
2.7 V
2.5 V
0
0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2
VDS, DRAIN–TO–SOURCE VOLTAGE (VOLTS)
Figure 1. On–Region Characteristics
6
VDS ≥ 10 V
5
4
TJ = 100°C
3
2
25°C
1
– 55°C
0
2
2.5
3
3.5
4
VGS, GATE–TO–SOURCE VOLTAGE (VOLTS)
Figure 2. Transfer Characteristics
4
VDS ≥ 10 V
3
2
TJ = 100°C
25°C
1
– 55°C
0
1.5 1.7 1.9 2.1 2.3 2.5 2.7 2.9 3.1 3.3 3.5 3.7
VGS, GATE–TO–SOURCE VOLTAGE (VOLTS)
Figure 2. Transfer Characteristics
Motorola TMOS Power MOSFET Transistor Device Data
3
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