STPS30170DJF Ver la hoja de datos (PDF) - STMicroelectronics
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STPS30170DJF Datasheet PDF : 9 Pages
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STPS30170DJF
Characteristics
1
Characteristics
Table 1. Absolute Ratings (limiting values at 25 °C, unless otherwise specified, anode terminals short
circuited)
Symbol
Parameter
VRRM Repetitive peak reverse voltage
IF(RMS) Forward rms current
IF(AV) Average forward current, δ = 0.5, square wave
TC = 80 °C
IFSM Surge non repetitive forward current
tp = 10 ms sinusoidal
PARM Repetitive peak avalanche power
tp = 10 µs , Tj = 125 °C
Tstg Storage temperature range
Tj
Maximum operating junction temperature(1)
1. (dPtot/dTj) < (1/Rth(j-a)) condition to avoid thermal runaway for a diode on its own heatsink.
Value
Unit
170
V
45
A
30
A
200
A
900
W
-65 to +175 °C
150
°C
Symbol
Rth(j-c) Junction to case
Table 2. Thermal resistance parameters
Parameter
Max. value
2.5
Unit
°C/W
For more information, please refer to the following application note :
• AN5046 : Printed circuit board assembly recommendations for STMicroelectronics PowerFLAT™ packages
Table 3. Static electrical characteristics (anode terminals short circuited)
Symbol
Parameter
IR (1)
Reverse leakage current
VF (2)
Forward voltage drop
1. Pulse test: tp = 5 ms, δ < 2%
2. Pulse test: tp = 380 µs, δ < 2%
Test conditions
Tj = 25 °C
Tj = 125 °C
VR = VRRM
Tj = 25 °C
Tj = 125 °C
IF = 15 A
Tj = 25 °C
Tj = 125 °C
IF = 30 A
Min. Typ. Max. Unit
-
15
µA
-
4
12
mA
-
0.88
-
0.65 0.70
V
0.95
0.71 0.79
To evaluate the conduction losses use the following equation:
P = 0.65 x IF(AV) + 0.0046 IF 2 (RMS)
For more information, please refer to the following application notes related to the power losses :
• AN604: Calculation of conduction losses in a power rectifier
• AN4021: Calculation of reverse losses on a power diode
DS6587 - Rev 5
page 2/9
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