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STTH506TTI Ver la hoja de datos (PDF) - STMicroelectronics

Número de pieza
componentes Descripción
Lista de partido
STTH506TTI
ST-Microelectronics
STMicroelectronics ST-Microelectronics
STTH506TTI Datasheet PDF : 5 Pages
1 2 3 4 5
Fig. 1: Conduction losses versus average current.
STTH506TTI
Fig. 2: Forward voltage drop versus forward
current.
P(W)
20
18
16
14
12
10
8
6
4
2
0
0
δ = 0.05
δ = 0.1
δ = 0.2
δ = 0.5
IF(AV)(A)
1
2
3
4
δ=1
T
δ=tp/T
5
6
tp
7
IFM(A)
100
90
80
70
60
50
40
30
20
10
0
0
1
Tj=125°C
(maximum values)
Tj=125°C
(typical values)
Tj=25°C
(maximum values)
VFM(V)
2
3
4
5
6
7
8
Fig. 3: Relative variation of thermal impedance
junction to case versus pulse duration.
Fig. 4: Peak reverse recovery current versus
dIF/dt (90% confidence).
Zth(j-c)/Rth(j-c)
1.0
0.9
0.8
0.7
δ = 0.5
0.6
0.5
0.4 δ = 0.2
0.3 δ = 0.1
0.2
Single pulse
0.1
0.0
1.E-03
1.E-02
tp(s)
T
δ=tp/T
1.E-01
tp
1.E+00
IRM(A)
9
VR=400V
8 Tj=125°C
7
IF=2 x IF(AV)
IF=IF(AV)
6
IF=0.5 x IF(AV)
5
IF=0.25 x IF(AV)
4
3
2
1
dIF/dt(A/µs)
0
0
50 100 150 200 250 300 350 400 450 500
Fig. 5: Reverse recovery time versus dIF/dt (90%
confidence).
Fig. 6: Reverse recovery charges versus dIF/dt
(90% confidence).
trr(ns)
45
40
35
30
25
20
15
10
5
0
0
50
IF=2 x IF(AV)
IF=IF(AV)
VR=400V
Tj=125°C
IF=0.5 x IF(AV)
dIF/dt(A/µs)
100 150 200 250 300 350 400 450 500
Qrr(nC)
100
VR=400V
90
Tj=125°C
80
IF=2 x IF(AV)
70
IF=IF(AV)
60
IF=0.5 x IF(AV)
50
40
30
20
10
0
0
dIF/dt(A/µs)
50 100 150 200 250 300 350 400 450 500
3/5

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