STTH506TTI Ver la hoja de datos (PDF) - STMicroelectronics
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STTH506TTI Datasheet PDF : 5 Pages
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STTH506TTI
Fig. 7: Reverse recovery softness factor versus
dIF/dt (typical values).
Fig. 8: Relative variation of dynamic parameters
versus junction temperature (reference: Tj = 125°C).
S
0.60
IF=IF(AV)
VR=400V
Tj=125°C
0.50
0.40
0.30
0.20
0
dIF/dt(A/µs)
50 100 150 200 250 300 350 400 450 500
2.50
2.25
2.00
1.75
1.50
1.25
1.00
0.75
0.50
0.25
0.00
25
IF=IF(AV)
VR=400V
Reference: Tj=125°C
S
IRM
Tj(°C)
50
75
100
125
Fig. 9: Transient peak forward voltage versus
dIF/dt (90% confidence).
Fig. 10: Forward recovery time versus dIF/dt (90%
confidence).
VFP(V)
20
IF=IF(AV)
18 Tj=125°C
16
14
12
10
8
6
4
2
dIF/dt(A/µs)
0
0
50 100 150 200 250 300 350 400 450 500
tfr(ns)
200
180
160
140
120
100
80
60
40
20
0
0
100
IF=IF(AV)
VFR=1.1 x VF max.
Tj=125°C
dIF/dt(A/µs)
200
300
400
500
Fig. 11: Junction capacitance versus reverse
voltage applied (typical values).
C(pF)
100
F=1MHz
VOSC=30mVRMS
Tj=25°C
10
1
1
4/5
VR(V)
10
100
1000
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