VNP49N04(1996) Ver la hoja de datos (PDF) - STMicroelectronics
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VNP49N04 Datasheet PDF : 11 Pages
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VNP49N04
ABSOLUTE MAXIMUM RATING
Symbol
P ar ame t er
VDS Drain-source Voltage (Vin = 0)
Vin Input Voltage
ID
Drain Current
IR Reverse DC Output Current
Vesd
Pto t
Tj
Electrostatic Discharge (C= 100 pF , R=1.5 KΩ)
Total Dissipat ion at Tc = 25 oC
Operating Junction T emperature
Tc Case Operating T emperature
Tst g St orage Temperature
Value
Internally Clamped
18
Internally Limited
-50
2000
125
Internally Limited
Internally Limited
-55 to 150
Unit
V
V
A
A
V
W
oC
oC
oC
THERMAL DATA
Rthj-ca se Thermal Resistance Junction-case
Rthj- amb Thermal Resistance Junction-ambient
Max
Max
1
62.5
oC/W
oC/W
ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)
OFF
Symb ol
V CL AMP
V CL TH
VI NCL
IDSS
II SS
P a ram et er
Drain-source Clamp
Voltage
Drain-source Clamp
Threshold Voltage
Input-Source Reverse
Clamp Voltage
Zero Input Voltage
Drain Current (Vin = 0)
Supply Current from
Input Pin
Test Conditions
ID = 200 mA Vin = 0
ID = 2 mA Vin = 0
Iin = -1 mA
VDS = 13 V Vin = 0
VDS = 25 V Vin = 0
VDS = 0 V Vin = 10 V
Min.
36
Typ .
42
35
-1
250
M a x.
48
-0.3
50
200
500
Unit
V
V
V
µA
µA
µA
ON (∗)
Symb ol
VIN(th)
RDS( o n )
P a ram et er
Input Threshold
Voltage
Static Drain-source On
Re s is ta nc e
Test Conditions
VDS = Vin ID +Iin = 1 mA
Vin = 10 V ID = 25 A
Vin = 5 V ID = 25 A
Min.
0.8
Typ .
M a x.
3
Unit
V
0.02
Ω
0.025 Ω
DYNAMIC
Symb ol
gfs (∗)
Coss
P a ram et er
Forward
T r ans c on duc ta nc e
Output Capacitance
Test Conditions
VDS = 13 V ID = 25 A
VDS = 13 V f = 1 MHz Vin = 0
Min.
25
Typ .
30
M a x.
Unit
S
1100 1500 pF
2/11
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