VNP49N04(1996) Ver la hoja de datos (PDF) - STMicroelectronics
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VNP49N04 Datasheet PDF : 11 Pages
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VNP49N04
ELECTRICAL CHARACTERISTICS (continued)
SWITCHING (∗∗)
Symb ol
td(on)
tr
td(off)
tf
td(on)
tr
td(off)
tf
(di/ dt) on
Qi
P a ram et er
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Turn-on Current Slope
Total Input Charge
Test Conditions
VDD = 15 V
Vgen = 10 V
(see figure 3)
Id = 25 A
Rgen = 10 Ω
VDD = 15 V
Vgen = 10 V
(see figure 3)
Id = 25 A
Rgen = 1000 Ω
VDD = 15 V
Vin = 10 V
VDD = 15 V
ID = 25 A
Rgen = 10 Ω
ID = 25 A Vin = 10 V
Min.
Typ .
200
1300
800
300
1.3
3.8
12
6.1
25
M a x.
300
1800
1200
450
1.9
5.2
14
8.5
Unit
ns
ns
ns
ns
µs
µs
µs
µs
A/µs
100
nC
SOURCE DRAIN DIODE
Symb ol
P a ram et er
VSD (∗) Forward O n Volt age
tr r (∗∗)
Qr r (∗∗)
IRRM (∗∗)
Reverse Recovery
Time
Reverse Recovery
Charge
Reverse Recovery
Cu r re nt
Test Conditions
ISD = 25 A Vin = 0
ISD = 25 A di/dt = 100 A/µs
VDD = 30 V Tj = 25 oC
(see test circuit, figure 5)
Min.
Typ .
250
M a x.
1.6
Unit
V
ns
910
nC
7.5
A
PROTECTION
Symb ol
P a ram et er
Test Conditions
Ilim
Drain Current Limit
tdlim (∗∗) St ep Response
Current Limit
Vin = 10 V
Vin = 5 V
Vin = 10 V
Vin = 5 V
VDS = 13 V
VDS = 13 V
Tjsh (∗∗) Overtemperature
Shutdown
Tjrs (∗∗) Overtemperature Reset
Igf (∗∗) Fault Sink Current
Vin = 10 V VDS = 13 V
Vin = 5 V VDS = 13 V
Eas (∗∗) Single Pulse
starting Tj = 25 oC VDD = 20 V
Avalanche Energy
Vin = 10 V Rgen = 1 KΩ L = 6 mH
(∗) Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
(∗∗) Parameters guaranteed by design/characterization
Min.
30
30
150
Typ .
49
49
35
90
M a x.
68
68
50
150
Unit
A
A
µs
µs
oC
135
oC
50
mA
20
mA
4
J
3/11
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