KM681000BL Ver la hoja de datos (PDF) - Samsung

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KM681000BL

128K x8 bit Low Power CMOS Static RAM

Samsung 

KM681000B Family

DATA RETENTION CHARACTERISTICS

Item

Vcc for data retention

Symbol

VDR

Test Condition*

Min

CS1***¡ÃVcc-0.2V

2.0

KM681000BL

KM681000BL-L

L-Ver

-

LL-Ver

-

Data retention current

IDR KM681000BLE

KM681000BLE-L

Vcc=3.0V

CS1¡ÃVcc-0.2V

L-Ver

LL-Ver

-

-

KM681000BLI

KM681000BLI-L

L-Ver

-

LL-Ver

-

Data retention set-up time

Recovery time

tRDR

tRDR

See data retention waveform

0

5

* 1) Commercial Product : TA=0 to 70¡É, unless otherwise specified

2) Extended Product : TA=-25 to 85¡É, unless otherwise specified

2) Industrial Product : TA=-40 to 85¡É, unless otherwise specified

** TA=25¡É

*** CS1¡ÃVCC-0.2V,CS2¡ÃVCC-0.2V(CS1 controlled) or CS2¡Â0.2V(CS2 controlled)

PRELIMINARY

CMOS SRAM

Typ** Max Unit

-

5.5

V

1

50

0.5

10

-

50

§Ë

-

25

-

50

-

25

-

-

ms

-

-

DATA RETENTION TIMING DIAGRAM

1) CS1 Controlled

VCC

4.5V

tSDR

Data Retention Mode

tRDR

2.2V

VDR

CS1

GND

CS1¡Ã VCC - 0.2V

2) CS2 controlled

VCC

4.5V

CS2

VDR

0.4V

GND

Data Retention Mode

tSDR

tRDR

CS2 ¡Â 0.2V

Revision 0.3

April 1996

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