IKP40N65F5 Ver la hoja de datos (PDF) - Infineon Technologies

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Lista de partido

IKP40N65F5

650V DuoPack IGBT and Diode High speed switching series fifth generation

Infineon Technologies 

1000

td(off)

tf

td(on)

tr

100

IKW40N65F5,IKP40N65F5

Highspeedswitchingseriesfifthgeneration

1000

td(off)

tf

td(on)

tr

100

10

10

1

5 15 25 35 45 55 65 75 85

rG,GATERESISTOR[Ω]

Figure 9. Typicalswitchingtimesasafunctionofgate

resistor

(inductiveload,Tvj=150°C,VCE=400V,

VGE=15/0V,IC=20A,Dynamictestcircuitin

Figure E)

1

25

50

75

100 125 150 175

Tvj,JUNCTIONTEMPERATURE[°C]

Figure 10. Typicalswitchingtimesasafunctionof

junctiontemperature

(inductiveload,VCE=400V,VGE=15/0V,

IC=20A,rG=15Ω,Dynamictestcircuitin

Figure E)

5.5

typ.

min.

5.0

max.

8

Eoff

Eon

7

Ets

4.5

6

4.0

5

3.5

4

3.0

3

2.5

2

2.0

1.5

1

1.0

0

25

50

75

100 125 150

Tvj,JUNCTIONTEMPERATURE[°C]

0

0

20

40

60

80

100 120

IC,COLLECTORCURRENT[A]

Figure 11. Gate-emitterthresholdvoltageasafunction Figure 12. Typicalswitchingenergylossesasa

ofjunctiontemperature

functionofcollectorcurrent

(IC=0.4mA)

(inductiveload,Tvj=150°C,VCE=400V,

VGE=15/0V,rG=15Ω,Dynamictestcircuitin

Figure E)

10

Rev.1.2,2013-12-18

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