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IKP40N65F5

650V DuoPack IGBT and Diode High speed switching series fifth generation

Infineon Technologies 

IKW40N65F5,IKP40N65F5

Highspeedswitchingseriesfifthgeneration

DiodeCharacteristic,atTvj=150°C

Diode reverse recovery time

trr

Diode reverse recovery charge

Qrr

Diode peak reverse recovery current Irrm

Diode peak rate of fall of reverse

recoverycurrentduringtb

dirr/dt

Diode reverse recovery time

trr

Diode reverse recovery charge

Qrr

Diode peak reverse recovery current Irrm

Diode peak rate of fall of reverse

recoverycurrentduringtb

dirr/dt

Tvj=150°C,

VR=400V,

IF=20.0A,

diF/dt=1000A/µs

Tvj=150°C,

VR=400V,

IF=5.0A,

diF/dt=1000A/µs

-

85

- ns

- 1.00 - µC

- 17.0 - A

- -220 - A/µs

-

50

- ns

- 0.50 - µC

- 14.0 - A

- -500 - A/µs

7

Rev.1.2,2013-12-18

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