BDY55(Old_V) Ver la hoja de datos (PDF) - Comset Semiconductors
Número de pieza
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BDY55 Datasheet PDF : 3 Pages
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NPN SILICON TRANSISTORS, DIFFUSED MESA
LF Large Signal Power Amplification
High Current Fast Switching.
Compliance to RoHS.
ABSOLUTE MAXIMUM RATINGS
Symbol
VCEO
VCBO
VEBO
IC
IB
PTOT
TJ
TS
Ratings
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current
Base Current
Power Dissipation
@ TC = 25°
Junction Temperature
Storage Temperature
BDY55
BDY56
BDY55
BDY56
BDY55
BDY56
BDY55
BDY56
BDY55
BDY56
BDY55
BDY56
BDY55
BDY56
BDY55
BDY56
THERMAL CHARACTERISTICS
Symbol
Ratings
RthJ-C
Thermal Resistance, Junction to Case
BDY55
BDY56
Page 1 of 3
Value
60
120
100
150
7
15
7
Unit
V
V
V
A
A
117
Watts
200
°C
-65 to +200
Value
1.5
Unit
°C/W
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