BDY55(Old_V) Ver la hoja de datos (PDF) - Comset Semiconductors
Número de pieza
componentes Descripción
Lista de partido
BDY55 Datasheet PDF : 3 Pages
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ELECTRICAL CHARACTERISTICS
TC=25°C unless otherwise noted
Symbol
Ratings
VCEO(SUS)
Collector-Emitter
Breakdown Voltage (*)
Test Condition(s)
IC = 200 mA, IB = 0
BDY55
BDY56
ICEO
IEBO
ICEX
Collector-Emitter Cutoff
Current
VCE = 30 V
VCE = 60 V
Emitter-Base Cutoff Current VEB = 7 V
Collector-Emitter Cutoff
Current
VCE = 100 V
VBE = -1.5 V
VCE = 100 V
VBE = -1.5 V
TCASE = 150°C
VCE = 150 V
VBE = -1.5 V
VCE = 150 V
VBE = -1.5 V
TCASE = 150°C
BDY55
BDY56
BDY55
BDY56
BDY55
BDY56
VCE(SAT)
VCE(SAT)
VBE
Collector-Emitter saturation IC = 4.0 A, IB = 0.4 A
Voltage (*)
IC = 10 A, IB = 3.3 A
Collector-Emitter saturation
Voltage (*)
IC = 10 A, IB = 3.3 A
Base-Emitter Voltage (*)
IC = 4.0 A, VCE = 4.0 V
HFE
fT
td + tr
ts + tf
Static Forward Current
transfer ratio (*)
Transition Frequency
Turn-on time
Turn-off time
VCE = 4 V, IC = 4 A
VCE = 4 V, IC =10 A
VCE = 4.0 V, IC = 1.0 A,
f = 10 MHz
IC = 5 A, IB = 1 A
IC = 5 A,
IB1 = 1 A,
IB2 = -0.5 A
(*) Pulse Width ≈ 300 µs, Duty Cycle ∠ 2.0%
BDY55
BDY56
BDY55
BDY56
BDY55
BDY56
BDY55
BDY56
BDY55
BDY56
BDY55
BDY56
BDY55
BDY56
BDY55
BDY56
BDY55
BDY56
Min Typ Mx Unit
60 -
120 -
-
-
V
- - 0.7
mA
- - 0.5
- -5
mA
- -3
- -5
- - 30
mA
- -3
- - 30
- - 1.1
V
- - 2.5
- - 2.5
- - 1.8 V
20 - 70
V
10
10 - - MHz
- - 0.5 µs
- - 2 µs
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