30G122 Ver la hoja de datos (PDF) - Toshiba

Número de pieza

componentes Descripción

Lista de partido

30G122

GT45F122 IGBT 300V TO-220F

Toshiba 

2 IGBT Technical Overview

Prior to the development of IGBTs, power MOSFETs were used for power amplifier applications which require high input

impedance and fast switching. However, at high voltages, the on-state resistance rapidly increases as the breakdown voltage

increases. It is thus difficult to improve the conduction loss of power MOSFETs.

On the other hand, the IGBT structure consists of a PNP bipolar transistor and a collector contact made on the p+ layer. The

IGBT has a low on-state voltage drop due to conductivity modulation.

The following figure shows the VCE(sat) curve of a soft-switching 900-V IGBT. Toshiba has offered IGBTs featuring fast switching by

using carrier lifetime control techniques. Now, Toshiba offers even faster IGBTs with optimized carrier injection into the collector Player.

In the future, Toshiba will launch IGBTs with varied characteristics optimized for high-current-conduction and high-frequency-

switching applications. The improvements in IGBTs will be spurred by optimized wafers, smaller pattern geometries and

improved carrier lifetime control techniques.

900-V IGBT for Soft-Switching

2.8

2.6

2.4

2.2

2.0

Ta = 25˚C

1.8

High-speed: GT60M323

High-speed: GT50N322A(1000V)

Ta = 125˚C

Low-VCE(sat): GT60M303

1.6

1.4

0

NEW

GT60M324

0.1

0.2

0.3

0.4

0.5

0.6

0.7

Eoff(mJ) @VCC = 140 V, IC = 50 A, VGG = 20 V, RG = 10 Ω, C = 0.33 μF, L = 30 μH

Discrete IGBT Development Trends

1200 V

(1) High ruggedness (3rd gen): Low VCE(sat) and high ruggedness due to optimized carrier injection and thinner wafers

(3) High ruggedness (next gen): Thinner wafers and finer process geometries

(2) Soft switching (5th gen): Low VCE(sat) due to trench gate structure

(4) Soft switching (next gen): Thinner wafers and finer process geometries

900 to

1500 V

(1) Soft switching (4th gen): Low VCE(sat) due to trench gate structure

(2) Soft switching (5th gen): Low VCE(sat) due to optimized carrier injection and trench gate structure

(3) Soft switching (6th gen): Thinner wafers and finer process geometries

(1) High ruggedness (3rd gen): Low VCE(sat) and high ruggedness due to optimized carrier injection and thinner wafers

(4) High ruggedness (next gen): Thinner wafers and finer process geometries

600 V

(2) Fast switching (4th gen): High speedy tf due to optimized carrier injection

(5) Fast switching (next gen): Thinner wafers and finer process geometries

(3) Soft switching (4th gen): Low VCE(sat) due to trench gate structure

(6) Soft switching (5th gen): Thinner wafers and finer process geometries

400 V

(1) Strobe flashes (5th gen): Low VCE(sat) due to trench gate structure

(2) Strobe flashes (6th gen): High current due to trench gate structure and optimized wafers

(3) Strobe flashes (7th gen): High current due to optimized wafers and finer process geometries

300 to

400 V

(1) Plasma displays (4th gen): Low VCE(sat) due to trench gate structure and high IC due to life time control

(2) Plasma displays (4th gen): Improved transient performance due to Cu connector

(3) Plasma displays (next gen): Low turn-on loss due to thinner wafers and finer process geometries

Year

2006

2008

2010

–3–

Share Link: