30G122 Ver la hoja de datos (PDF) - Toshiba
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30G122 Datasheet PDF : 16 Pages
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5-1 General-Purpose Inverter
The fast-switching (FS) series, a new addition to our third-generation IGBTs,
features high ruggedness which helps to improve the energy efficiency of electronic equipment.
General-Purpose
Inverters
Inverter Air
Conditioners
Inverter Washing
Machines
UPS
Rectifier PL
circuit
Inverter PL
Input
CB
Control
Output
Discrete IGBT Trend
For general-purpose inverters
Our 3rd generation low-loss and low-noise IGBTs are ideal for inverter applications to reduce switching loss and thus improve
energy efficiency. The following graphs compare the thermal and turn-on characteristics of our 3rd generation IGBTs and
500-V MOSFETs
IC - VCE Temperature Characteristics
Low saturation voltage with minimal temperature dependence
50
GT50J301
40
MOSFET
Turn-On Waveform
Fast reverse-recovery characteristics due to built-in
diode with optimal characteristics
GT50J301
VCE
MOSFET
30
@VGE = 15 V
20
GT50J301:
Ta = 25°C
Ta = 125°C
10
MOSFET (500 V / 50 A):
Ta = 25°C
Ta = 125°C
0
0
2
4
6
8
10
Collector - Emitter Voltage, VCE (V)
Power Loss vs. Carrier Frequency Characteristics
Simulation data for inverter applications 80
GT50J301
Ic
MOSFET
t : 0.1μs/div
@Ta = 125°C
VCC = 300 V
VGE = + 15 V
di/dt –400 A/μs
60
@fo = 50 Hz
40
Po = 7.5 kW
GT50J301:
Ta = 25°C
Ta = 125°C
20
MOSFET (500 V / 50 A):
Ta = 25°C
Ta = 125°C
0
0
MOSFET
GT50J301
4
8
12
16
20
24
Carrier Frequency, fC (kHz)
–5–
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