TGA1073G-SCC Ver la hoja de datos (PDF) - TriQuint Semiconductor
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TGA1073G-SCC Datasheet PDF : 8 Pages
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Absolute Maximum Ratings
Parameter
Rating
Positive Supply Voltage (V+) (3)
8V
Positive Supply Current (I+) (1)(3)
296 mA
Negative Supply Current (I−) (1)
8.8 mA
Input Continuous Wave Power (PIN) (3) 18.2 dBm
Power Dissipation (PD) (2)(3)
1.32 W
Mounting Temperature (30 seconds)
320°C
Storage Temperature (TSTG)
−65 to 150°C
Operation of this device outside the parameter ranges
given above may cause permanent damage.
Notes:
1. Total current for all stages.
2. When operated at this bias condition with a baseplate
temperature of 55°C, the median lifetime (TM) is 1 x
10^6 hours.
3. Combinations of supply voltage, supply current, input
power, and output power shall not exceed PD.
TGA1073G-SCC
19 to 27 GHz Medium Power Amplifier
Recommended Operating Conditions
Parameter
Min Typ Max Units
Operating Channel
Temperature (TCH) (1)(2)
200
°C
Electrical specifications are measured at specified test
conditions. Specifications are not guaranteed over all
recommended operating conditions.
Notes:
1. These ratings apply to each individual FET.
2. Junction operating temperature will directly affect the device
median lifetime (TM). For maximum life, it is recommended
that junction temperatures be maintained to the lowest
possible levels.
3.
DC Electrical Specifications
Test conditions unless otherwise noted: STD, 25°C Nominal
Parameter
Min
Typ
Max
Units
IDSS3
80
376
mA
GM3
176
424
mS
|VP1| (1)
0.5
1.5
V
|VP2| (1)
0.5
1.5
V
|VP3| (1)
0.5
1.5
V
|VBVGD1| (1)
11
30
V
|VBVGS1| (1)
11
30
V
Notes:
1. VP, VBVGD, and VBVGS are negative.
2. The measurement conditions are subject to change at the manufacturer’s discretion (with appropriate notification to the buyer).
Datasheet: Rev A 02-24-15
© 2013 TriQuint
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Disclaimer: Subject to change without notice
www.triquint.com
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