TGA1073G-SCC Ver la hoja de datos (PDF) - TriQuint Semiconductor
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TGA1073G-SCC Datasheet PDF : 8 Pages
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TGA1073G-SCC
19 to 27 GHz Medium Power Amplifier
Assembly Process Notes
Reflow process assembly notes:
Use AuSn (80/20) solder with limited exposure to temperatures at or above 300C for 30 sec.
An alloy station or conveyor furnace with reducing atmosphere should be used.
No fluxes should be utilized.
Coefficient of thermal expansion matching is critical for long-term reliability.
Devices must be stored in a dry nitrogen atmosphere.
Component placement and adhesive attachment assembly notes:
Vacuum pencils and/or vacuum collets are the preferred method of pick up.
Air bridges must be avoided during placement.
The force impact is critical during auto placement.
Organic attachment can be used in low-power applications.
Curing should be done in a convection oven; proper exhaust is a safety concern.
Microwave or radiant curing should not be used because of differential heating.
Coefficient of thermal expansion matching is critical.
Interconnect process assembly notes:
Thermosonic ball bonding is the preferred interconnect technique.
Force, time, and ultrasonics are critical parameters.
Aluminum wire should not be used.
Discrete FET devices with small pad sizes should be bonded with 0.0007-inch wire.
Maximum stage temperature is 200C.
Datasheet: Rev A 02-24-15
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