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IRF420 Datasheet PDF : 7 Pages
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IRF420, IRF421, IRF422, IRF423
Absolute Maximum Ratings TC = 25oC Unless Otherwise Specified
IRF420
Drain to Source Breakdown Voltage (Note 1). . . . . . . . . .VDS
500
Drain to Gate Voltage (RGS = 20kΩ) (Note 1) . . . . . . . VDGR
500
Continuous Drain Current. . .
TC = 100oC . . . . . . . . . . . .
...........
...........
...
...
.........
.........
ID
ID
2.5
1.6
Pulsed Drain Current (Note 3) . . . . . . . . . . . . . . . . . . . . . IDM
10
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . .VGS
±20
Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . PD
50
Linear Derating Factor . . . . . . . . . . . . . . . . . . . . . . . . . . . .
0.4
Single Pulse Avalanche Energy Rating (Note 4) . . . . . . . EAS
Operating and Storage Temperature . . . . . . . . . . . .TJ, TSTG
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s . . . . . . . . . TL
Package Body for 10s, See TB334 . . . . . . . . . . . . . . . Tpkg
210
-55 to 150
300
260
IRF421
450
450
2.5
1.6
10
±20
50
0.4
210
-55 to 150
300
260
IRF422
500
500
2.2
1.4
8
±20
50
0.4
210
-55 to 150
300
260
IRF423
450
450
2.2
1.4
8
±20
50
0.4
210
-55 to 150
300
260
UNITS
V
V
A
A
A
V
W
W/oC
mJ
oC
oC
oC
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation
of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE:
1. TJ = 25oC to 125oC.
Electrical Specifications TC = 25oC, Unless Otherwise Specified
PARAMETER
SYMBOL
TEST CONDITIONS
MIN TYP MAX UNITS
Drain to Source Breakdown Voltage
IRF420, IRF422
BVDSS ID = 250µA, VGS = 0V, (Figure 10)
500 -
-
V
IRF421, IRF423
450 -
-
V
Gate Threshold Voltage
Zero Gate Voltage Drain Current
On-State Drain Current (Note 2)
IRF420, IRF421
VGS(TH) VGS = VDS, ID = 250µA
IDSS VDS = Rated BVDSS, VGS = 0V
VDS = 0.8 x Rated BVDSS, VGS = 0V,
TJ = 125oC
ID(ON) VDS > ID(ON) x rDS(ON)MAX, VGS = 10V
(Figure 7)
2.0
-
4.0
V
-
-
25
µA
-
- 250 µA
2.5
-
-
A
IRF422, IRF423
2.2
-
-
A
Gate to Source Leakage Current
Drain to Source On Resistance (Note 2)
IRF420, IRF421
IGSS
rDS(ON)
VGS = ±20V
ID = 1.4A, VGS = 10V, (Figures 8, 9)
-
- ±100 nA
-
2.5 3.0
Ω
IRF422, IRF423
-
3.0 4.0
Ω
Forward Transconductance (Note 2)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
(Gate to Source + Gate to Drain)
Gate to Source Charge
Gate to Drain “Miller” Charge
gfs
VDS ≥ 10V, ID = 2.0A, (Figure 12)
1.5 2.3
-
S
td(ON) VDD = 250V, ID ≈ 2.5A, RG = 18Ω, RL = 96Ω,
-
10 15
ns
VGS = 10V, (Figures 17, 18) MOSFET Switching
tr
Times are Essentially Independent of Operating
-
12 18
ns
Temperature
td(OFF)
-
28 42
ns
tf
-
12 18
ns
Qg(TOT) VGS = 10V, ID ≈ 2.5A, VDS = 0.8 x Rated BVDSS, -
11 19
nC
IG(REF) = 1.5mA, (Figures 14, 19, 20)
Gate Charge is Essentially Independent of
Qgs Operating Temperature
-
5
-
nC
Qgd
-
6
-
nC
5-2
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