2SC3636 Ver la hoja de datos (PDF) - Inchange Semiconductor
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2SC3636 Datasheet PDF : 4 Pages
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Inchange Semiconductor
Silicon NPN Power Transistors
Product Specification
2SC3636
DESCRIPTION
·With TO-3PN package
·High voltage ,high speed
·High reliability
APPLICATIONS
·Ultrahigh-definition CRT display horizontal
deflection output applications
PINNING
PIN
DESCRIPTION
1
Base
2
Collector;connected to
mounting base
3
Emitter
Fig.1 simplified outline (TO-3PN) and symbol
固IN电C半H导AN体GE SEMICONDUCTOR Absolute maximum ratings(Ta=℃)
SYMBOL
PARAMETER
CONDITIONS
VCBO
Collector-base voltage
Open emitter
VCEO
Collector-emitter voltage
Open base
VALUE
900
500
UNIT
V
V
VEBO
Emitter-base voltage
Open collector
7
V
IC
Collector current
7
A
ICM
Collector current-peak
14
A
PC
Collector power dissipation
TC=25℃
80
W
Tj
Junction temperature
150
℃
Tstg
Storage temperature
-55~150
℃
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