2SC3636 Ver la hoja de datos (PDF) - Inchange Semiconductor
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2SC3636 Datasheet PDF : 4 Pages
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Inchange Semiconductor
Silicon NPN Power Transistors
Product Specification
2SC3636
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP. MAX UNIT
VCEO(SUS) Collector-emitter sustaining voltage IC=100mA ; IB=0
500
V
VCEsat Collector-emitter saturation voltage IC=4A ;IB=0.8A
2.0
V
VBEsat Base-emitter saturation voltage
ICBO
Collector cut-off current
IC=4A ;IB=0.8A
VCB=500V; IE=0
1.5
V
10 μA
ICES
Collector cut-off current
VCE=900V; RBE=0
0.5 mA
IEBO
Emitter cut-off current
VEB=5V; IC=0
1.0 mA
hFE
DC current gain
IC=0.8A ; VCE=5V
8
Switching times
固IN电C半H导AN体GE SEMICONDUCTOR ts
Storage time
tf
Fall time
VCC=200V;IC=4A;
IB1=0.8A; IB2=-1.6A
3.0 μs
0.1 0.2 μs
2
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