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D1646

Silicon NPN Darlington Power Transistor

Inchange Semiconductor 

INCHANGE Semiconductor

isc Silicon NPN Darlington Power Transistor

isc Product Specification

2SD1646

DESCRIPTION

·Collector-Emitter Breakdown Voltage-

: V(BR)CEO= 100V(Min.)

·High DC Current Gain

: hFE= 1000(Min) @IC= 1A

·Low Collector Saturation Voltage

APPLICATIONS

·Designed for low frequency power amplifier applications.

ABSOLUTE MAXIMUM RATINGS(Ta=25℃)

SYMBOL

PARAMETER

VALUE

UNIT

VCBO

Collector-Base Voltage

100

V

VCEO

Collector-Emitter Voltage

100

V

VEBO

Emitter-Base Voltage

6

V

IC

Collector Current-Continuous

2

A

ICP

Collector Current-Peak

Collector Power Dissipation

@ Ta=25℃

PC

Collector Power Dissipation

@ TC=25℃

TJ

Junction Temperature

Tstg

Storage Temperature Range

3

A

1.5

W

25

150

℃

-55~150

℃

isc Website：www.iscsemi.cn

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