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D1646

Silicon NPN Darlington Power Transistor

Inchange Semiconductor 

INCHANGE Semiconductor

isc Silicon NPN Darlington Power Transistor

isc Product Specification

2SD1646

ELECTRICAL CHARACTERISTICS

TC=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

MIN TYP. MAX UNIT

V(BR)CEO Collector-Emitter Breakdown Voltage IC= 5mA; IB=B 0

V(BR)CBO Collector-Base Breakdown Voltage

IC= 50μA; IE= 0

VCE(sat) Collector-Emitter Saturation Voltage IC= 1A; IB=B 1mA

ICBO

Collector Cutoff Current

VCB= 100V; IE= 0

IEBO

Emitter Cutoff Current

VEB= 5V; IC= 0

hFE

DC Current Gain

IC= 1A; VCE= 2V

COB

Collector Output Capacitance

IE= 0; VCB= 10V; f= 1MHz

100

V

100

V

1.5

V

10

μA

3

mA

1000

10000

25

pF

isc Website：www.iscsemi.cn

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