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2SK3472 Datasheet PDF : 6 Pages
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2SK3472
TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (π-MOS V)
2SK3472
Switching Regulator Applications
• Low drain-source ON-resistance: RDS (ON) = 4.0 mΩ (typ.)
• High forward transfer admittance: |Yfs| = 0.8 S (typ.)
• Low leakage current: IDSS = 100 μA (max) (VDS = 450 V)
• Enhancement model: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA)
Absolute Maximum Ratings (Ta = 25°C)
Characteristic
Symbol Rating
Unit
6.5 ± 0.2
5.2 ± 0. 2
Unit: mm
0.6 MAX.
0.8 MAX.
0.6 ± 0.15
1
1.05 MAX.
23
1.1 ± 0. 2
0.6 MAX.
Drain-source voltage
VDSS
450
V
Drain-gate voltage (RGS = 20 kΩ)
VDGR
450
V
Gate-source voltage
VGSS
±30
V
DC (Note 1)
ID
1
A
Drain current
Pulse (Note 1)
IDP
2
A
Drain power dissipation (Tc = 25°C)
PD
20
W
Single-pulse avalanche energy (Note 2)
EAS
122
mJ
Avalanche current
IAR
1
A
Repetitive avalanche energy (Note 3)
EAR
2
mJ
Channel temperature
Tch
150
°C
Storage temperature range
Tstg
−55 to150
°C
2.3 ± 0.15 2.3 ± 0. 15
1. GATE
2. DRAIN
（HEAT SIN K）
3. SOURSE
2
1
3
JEDEC
―
JEITA
―
TOSHIBA
2-7J1B
Weight: 0.36 g (typ.)
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability
Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e.
reliability test report and estimated failure rate, etc).
Thermal Characteristics
Characteristic
Symbol
Max
Unit
Thermal resistance, channel to case
Rth (ch-c)
6.25
Thermal resistance, channel to ambient Rth (ch-a)
125
°C/W
°C/W
Note 1: Ensure that the channel temperature does not exceed 150°C.
Note 2: VDD = 90 V, Tch = 25°C (initial), L = 203 mH, RG = 25 Ω, IAR = 1 A
Note 3: Repetitive rating: pulse width limited by maximum channel temperature
This transistor is an electrostatic-sensitive device. Handle with care.
1
2010-02-05
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