2SK3472 Ver la hoja de datos (PDF) - Toshiba
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Lista de partido
2SK3472 Datasheet PDF : 6 Pages
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Electrical Characteristics (Ta = 25°C)
2SK3472
Characteristic
Gate leakage current
Drain-source breakdown voltage
Drain cutoff current
Drain-source breakdown voltage
Gate threshold voltage
Drain-source ON-resistance
Forward transfer admittance
Input capacitance
Reverse transfer capacitance
Output capacitance
Rise time
Switching time
Turn-on time
Fall time
Turn-off time
Total gate charge
(gate-source plus gate-drain)
Gate-source charge
Gate-drain (“Miller”) charge
Symbol
Test Condition
Min
IGSS
VGS = ±25 V, VDS = 0 V
⎯
V (BR) GSS IG = ±10 μA, VDS = 0 V
±30
IDSS
VDS = 450 V, VGS = 0 V
⎯
V (BR) DSS ID = 10 mA, VGS = 0 V
450
Vth
VDS = 10 V, ID = 1 mA
2.0
RDS (ON) VGS = 10 V, ID = 0.5 A
⎯
⎪Yfs⎪
VDS = 10 V, ID = 0.5 A
0.3
Ciss
⎯
Crss
VDS = 25 V, VGS = 0 V, f = 1 MHz
⎯
Coss
⎯
tr
10 V
VGS
0V
ton
ID = 0.5 A
VOUT
⎯
⎯
RL = 400 Ω
tf
⎯
VDD ≈ 200 V
toff
Duty ≤ 1%, tw = 10 μs
⎯
Typ.
⎯
⎯
⎯
⎯
⎯
4.0
0.8
180
2
20
7
15
30
70
Max
±10
⎯
100
⎯
4.0
4.6
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
Unit
μA
V
μA
V
V
Ω
S
pF
ns
Qg
Qgs
VDD ≈ 360 V, VGS = 10 V, ID = 1 A
Qgd
⎯
5
⎯
⎯
3
⎯
nC
⎯
2
⎯
Source-Drain Ratings and Characteristics (Ta = 25°C)
Characteristic
Continuous drain reverse current (Note 1)
Pulse drain reverse current
(Note 1)
Forward voltage (diode)
Reverse recovery time
Reverse recovery charge
Symbol
IDR
IDRP
VDSF
trr
Qrr
Test Condition
⎯
⎯
IDR = 1 A, VGS = 0 V
IDR = 1 A, VGS = 0 V,
dIDR/dt = 100 A/μs
Min Typ. Max Unit
⎯
⎯
1
A
⎯
⎯
2
A
⎯
⎯
−1.7
V
⎯
350
⎯
μs
⎯
1.3
⎯
μC
Marking
K3472
Part No.
(or abbreviation code)
Lot No.
Note 4
Note 4 : A line under a Lot No. identifies the indication of product Labels
[[G]]/RoHS COMPATIBLE or [[G]]/RoHS [[Pb]]
Please contact your TOSHIBA sales representative for details as to
environmental matters such as the RoHS compatibility of Product.
The RoHS is Directive 2002/95/EC of the European Parliament and
of the Council of 27 January 2003 on the restriction of the use of certain
hazardous substances in electrical and electronic equipment.
2
2010-02-05
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