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5962D9568801VGA

Radiation Hardened, Very Wideband, High Input Impedance Uncompensated Operational Amplifiers

Intersil 

HS-2620RH, HS-2622RH

Die Characteristics

DIE DIMENSIONS:

69 mils x 66 mils x 19 mils ±1 mil

1750µm x 1420µm x 483µm ±25.4µm

INTERFACE MATERIALS:

Glassivation:

Type: Nitride (S13N4) over Silox (SiO2, 5% Phos.)

Silox Thickness: 12kÅ ±2kÅ

Nitride Thickness: 3.5kÅ ±1.5kÅ

Top Metallization:

Type: Al, 1% Cu

Thickness: 18kÅ ±2kÅ

Substrate:

Linear Bipolar, DI

Backside Finish:

Silicon

ASSEMBLY RELATED INFORMATION:

Substrate Potential (Powered Up):

Unbiased

ADDITIONAL INFORMATION:

Worst Case Current Density:

<2 x 105 A/cm2

Transistor Count:

HS-2620RH: 140

HS-2622RH: 140

Metallization Mask Layout

HS-2620RH, HS-2622RH

COMP

V+

BAL

OUT

-IN

+IN

V-

BAL

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Intersil semiconductor products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design and/or specifications at any time with-

out notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and

reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result

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