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5962R9582401QQC

Radiation Hardened 8-Bit CMOS Microprocessor

Intersil 

Die Characteristics

DIE DIMENSIONS:

229 mils x 240 mils x 14 mils ±1 mil

INTERFACE MATERIALS:

Glassivation:

Type: SiO2

Thickness: 8kÅ ±1kÅ

Top Metallization:

Type: SiAl

Thickness: 11kÅ ±2kÅ

Metallization Mask Layout

HS-80C85RH

Substrate:

Radiation Hardened Silicon Gate,

Dielectric Isolation

Backside Finish:

Silicon

ASSEMBLY RELATED INFORMATION:

Substrate Potential:

Unbiased (DI)

HS-80C85RH

TRAP (6)

RST 7.5 (7)

RST 6.5 (8)

RST 5.5 (9)

INTR (10)

INTA (11)

AD0 (12)

AD1 (13)

AD2 (14)

AD3 (15)

AD4 (16)

(35) READY

(34) IO/M

(33) S1

(32) RD

(31) WR

(30) ALE

(29) S0

(28) A15

(27) A14

(26) A13

(25) A12

16

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