AM29DL400BB-120ED Ver la hoja de datos (PDF) - Advanced Micro Devices

Número de pieza

componentes Descripción

Lista de partido

AM29DL400BB-120ED

4 Megabit (512 K x 8-Bit/256 K x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory

Advanced Micro Devices 

Am29DL400B

4 Megabit (512 K x 8-Bit/256 K x 16-Bit)

CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory

This product has been retired and is not recommended for designs. For new and current designs, S29AL004D supersedes Am29DL400B and is the factory-recommended migration path.

Please refer to the S29AL004D datasheet for specifications and ordering information. Availability of this document is retained for reference and historical purposes only.

DISTINCTIVE CHARACTERISTICS

■ Simultaneous Read/Write operations

— Host system can program or erase in one bank,

then immediately and simultaneously read

from the other bank

— Zero latency between read and write

operations

— Read-while-erase

— Read-while-program

■ Single power supply operation

— 2.7 to 3.6 volt read and write operations for

battery-powered applications

■ Manufactured on 0.32 µm process

technology

■ High performance

— Access times as fast as 70 ns

■ Low current consumption (typical

values at 5 MHz)

— 7 mA active read current

— 21 mA active read-while-program or read-

while-erase current

— 17 mA active program-while-erase-suspended

current

— 200 nA in standby mode

— 200 nA in automatic sleep mode

— Standard tCE chip enable access time applies to

transition from automatic sleep mode to active

mode

■ Flexible sector architecture

— Two 16 Kword, two 8 Kword, four 4 Kword, and

six 32 Kword sectors in word mode

— Two 32 Kbyte, two 16 Kbyte, four 8 Kbyte, and

six 64 Kbyte sectors in byte mode

— Any combination of sectors can be erased

— Supports full chip erase

■ Unlock Bypass Program Command

— Reduces overall programming time when

issuing multiple program command sequences

■ Sector protection

— Hardware method of locking a sector to

prevent any program or erase operation within

that sector

— Sectors can be locked in-system or via

programming equipment

— Temporary Sector Unprotect feature allows

code changes in previously locked sectors

■ Top or bottom boot block configurations

available

■ Embedded Algorithms

— Embedded Erase algorithm automatically

pre-programs and erases sectors or entire chip

— Embedded Program algorithm automatically

programs and verifies data at specified address

■ Minimum 1 million program/erase cycles

guaranteed per sector

■ 20-year data retention at 125° C

— Reliable operation for the life of the system

■ Package options

— 44-pin SO

— 48-pin TSOP

■ Compatible with JEDEC standards

— Pinout and software compatible with

single-power-supply flash standard

— Superior inadvertent write protection

■ Data# Polling and Toggle Bits

— Provides a software method of detecting

program or erase cycle completion

■ Ready/Busy# output (RY/BY#)

— Hardware method for detecting program or

erase cycle completion

■ Erase Suspend/Erase Resume

— Suspends or resumes erasing sectors to allow

reading and programming in other sectors

— No need to suspend if sector is in the other

bank

■ Hardware reset pin (RESET#)

— Hardware method of resetting the device to

reading array data

This Data Sheet states AMD’s current technical specifications regarding the Products described herein. This Data Sheet may

be revised by subsequent versions or modifications due to changes in technical specifications.

Publication# 21606 Rev: E Amendment/+4

Issue Date: June 7, 2005

Share Link: