AP4959GM Ver la hoja de datos (PDF) - Advanced Power Electronics Corp
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AP4959GM Datasheet PDF : 4 Pages
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AP4959GM
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol
Parameter
Test Conditions
Min. Typ. Max. Units
BVDSS
ΔBVDSS/ΔTj
RDS(ON)
VGS(th)
gfs
IDSS
IGSS
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
Drain-Source Breakdown Voltage
VGS=0V, ID=-250uA
Breakdown Voltage Temperature Coefficient Reference to 25℃, ID=-1mA
Static Drain-Source On-Resistance2 VGS=-4.5V, ID=-4A
VGS=-2.5V, ID=-3A
Gate Threshold Voltage
Forward Transconductance
Drain-Source Leakage Current (Tj=25oC)
Drain-Source Leakage Current (Tj=70oC)
Gate-Source Leakage
Total Gate Charge2
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time2
Rise Time
Turn-off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
VGS=-1.8V, ID=-1A
VDS=VGS, ID=-250uA
VDS=-5V, ID=-4A
VDS=-16V, VGS=0V
VDS=-12V, VGS=0V
VGS=±8V
ID=-4A
VDS=-12V
VGS=-4.5V
VDS=-10V
ID=-1A
RG=3.3Ω,VGS=-5V
RD=10Ω
VGS=0V
VDS=-15V
f=1.0MHz
-16 -
-
V
- -0.01 - V/℃
-
- 65 mΩ
-
- 75 mΩ
-
- 100 mΩ
-
- -1.0 V
- 10 -
S
-0.3 - -1 uA
-
- -25 uA
-
- ±100 nA
- 13 20 nC
-
2
- nC
-
4
- nC
- 11 - ns
- 19 - ns
- 38 - ns
- 22 - ns
- 920 1780 pF
- 175 - pF
- 150 - pF
Source-Drain Diode
Symbol
VSD
Parameter
Forward On Voltage2
Test Conditions
IS=-1.7A, VGS=0V
Min. Typ. Max. Units
-
- -1.2 V
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse width <300us , duty cycle <2%.
3.Surface mounted on 1 in2 copper pad of FR4 board ; 135 ℃/W when mounted on min. copper pad.
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