AP4959GM Ver la hoja de datos (PDF) - Advanced Power Electronics Corp
Número de pieza
componentes Descripción
Lista de partido
AP4959GM Datasheet PDF : 4 Pages
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15
T A = 25 o C
-5.0V
-4.5V
12
-3.5V
-1.8V
9
6
3
V G = - 1. 0 V
0
0
1
2
3
4
-V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
330
270
I D = -1 A
T A =25 o C
210
150
90
30
0
1
2
3
4
5
-V GS , Gate-to-Source Voltage (V)
Fig 3. On-Resistance v.s. Gate Voltage
5
4
3
T j =150 o C
2
T j =25 o C
1
0
0
0.2
0.4
0.6
0.8
1
1.2
1.4
-V SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
AP4959GM
15
T A = 150 o C
-5.0V
-4.5V
12
-3.5V
9
-1.8V
6
3
V G = - 1. 0 V
0
0
1
2
3
4
-V DS , Drain-to-Source Voltage (V)
Fig 2. Typical Output Characteristics
1.6
I D =-4A
1.4
V G =-4.5V
1.2
1.0
0.8
0.6
-50
0
50
100
150
T j , Junction Temperature ( o C)
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
2.0
1.5
1.0
0.5
0.0
-50
0
50
100
150
T j , Junction Temperature ( o C)
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
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