ATF-33143 Ver la hoja de datos (PDF) - HP => Agilent Technologies
Número de pieza
componentes Descripción
Lista de partido
ATF-33143 Datasheet PDF : 14 Pages
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ATF-33143 Typical Performance Curves
40
40
2V
3V
4V
30
30
20
20
10
2V
3V
4V
0
0 20 40 60 80 100 120
IDSQ (mA)
Figure 6. OIP3, IIP3 vs. Bias [1] at
2GHz.
25
10
0
0 20 40 60 80 100 120
IDSQ (mA)
Figure 7. OIP3, IIP3 vs. Bias [1] at
900 MHz.
25
20
20
15
15
10
10
5
2V
3V
4V
0
0 20 40 60 80 100 120
IDSQ (mA)
Figure 8. P1dB vs. Bias [1,2] at 2 GHz.
5
2V
3V
4V
0
0 20 40 60 80 100 120
IDSQ (mA)
Figure 9. P1dB vs. Bias [1,2] Tuned for NF
@ 4V, 80mA at 900MHz.
16
1.4
22
1.2
15
1.2
21
1.0
Ga
14
1.0
20
0.8
Ga
13
0.8
19
0.6
12
0.6
NF
11
2 V 0.4
3V
4V
10
0.2
0 20 40 60 80 100 120
IDSQ (mA)
Figure 10. NF and Ga vs. Bias [1] at
2GHz.
18 NF
0.4
17
2 V 0.2
3V
4V
16
0
0 20 40 60 80 100 120
IDSQ (mA)
Figure 11. NF and Ga vs. Bias [1] at
900 MHz.
Notes:
1. Measurements made on a fixed tuned production test board that was tuned for optimal gain match with reasonable noise figure at 4V
80␣ mA bias. This circuit represents a trade-off between optimal noise match, maximum gain match and a realizable match based on
production test board requirements. Circuit losses have been de-embedded from actual measurements.
2. Quiescent drain current, IDSQ, is set with zero RF drive applied. As P1dB is approached, the drain current may increase or decrease
depending on frequency and dc bias point. At lower values of IDSQ the device is running closer to class B as power output approaches
P1dB. This results in higher P1dB and higher PAE (power added efficiency) when compared to a device that is driven by a constant
current source as is typically done with active biasing.
4
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