ATF-33143 Ver la hoja de datos (PDF) - HP => Agilent Technologies
Número de pieza
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ATF-33143 Datasheet PDF : 14 Pages
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ATF-33143 Power Parameters Tuned for Max P1dB, VDS = 4 V, IDSQ = 80 mA
Freq P1dB
Id
(GHz) (dBm) (mA)
G1dB PAE1dB P3dB
Id PAE3dB Γ Out_mag Γ Out_ang
(dB) (%) (dBm) (mA) (%)
(Mag.)
(°)
0.9
20.7
89
23.2
33
23.2
102
51
0.39
160
1.5
21.2
91
20.7
36
23.8
116
51
0.43
165
1.8
21.1
80
19.2
40
23.0
94
52
0.43
170
2.0
21.6
81
18.1
44
23.2
89
57
0.42
174
4.0
23.0
97
11.9
48
24.6
135
48
0.40
-150
6.0
24.0
130
5.9
36
25.2
136
36
0.37
-124
70
60
Pout
Gain
50
PAE
40
30
20
10
0
-10
-20
-40 -30 -20 -10 0 10 20
Pin (dBm)
Figure 20. Swept Power Tuned for
Max P1dB
VDS = 4V, I DSQ = 80 mA, 2 GHz.
Notes:
1. Measurements made on ATN LP1 power load pull system.
2. Quicescent drain current, IDSQ, is set with zero RF drive applied. As P1dB is approached, the drain current may increase or decrease
depending on frequency and dc bias point. At lower values of IDSQ the device is running closer to class B as power output approaches
P1dB. This results in higher P1dB and higher PAE (power added efficiency) when compared to a device that is driven by a constant
current source as is typically done with active biasing.
3. PAE (%) = ((Pout – Pin) / Pdc) X 100
4. Gamma out is the reflection coefficient of the matching circuit presented to the output of the device.
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