BAS116H Ver la hoja de datos (PDF) - Philips Electronics
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BAS116H Datasheet PDF : 9 Pages
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Philips Semiconductors
BAS116H
75 V, low leakage diode in small SOD123F package
6. Thermal characteristics
Table 6:
Symbol
Rth(j-a)
Rth(j-sp)
Thermal characteristics
Parameter
thermal resistance from
junction to ambient
thermal resistance from
junction to solder point
Conditions
in free air
Min Typ Max Unit
[1] [2] -
-
330 K/W
-
-
70 K/W
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
[2] Reflow soldering is the only recommended soldering method.
7. Characteristics
Table 7: Characteristics
Tamb = 25 °C unless otherwise specified.
Symbol Parameter
Conditions
Per diode
VF
forward voltage
IF = 1 mA
IF = 10 mA
IF = 50 mA
IF = 150 mA
IR
reverse current
VR = 75 V
VR = 75 V; Tj = 150 °C
Cd
diode capacitance VR = 0 V; f = 1 MHz
trr
reverse recovery
time
Min Typ Max
[1] -
-
0.90
[1] -
-
1.00
[1] -
-
1.10
[1] -
-
1.25
-
0.003 5.0
-
3
80.0
-
2
-
[2] -
0.8 3.0
[1] Pulse test: tp ≤ 300 µs; δ ≤ 0.02.
[2] When switched from IF = 10 mA to IR = 10 mA; RL = 100 Ω; measured at IR = 1 mA
Unit
mV
mV
mV
mV
nA
nA
pF
µs
9397 750 14881
Product data sheet
Rev. 01 — 11 April 2005
© Koninklijke Philips Electronics N.V. 2005. All rights reserved.
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