BB506M Ver la hoja de datos (PDF) - Renesas Electronics
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BB506M Datasheet PDF : 9 Pages
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BB506M
Electrical Characteristics
Item
Symbol Min
Drain to source breakdown V(BR)DSS
6
voltage
Gate1 to source breakdown V(BR)G1SS
+6
voltage
Gate2 to source breakdown V(BR)G2SS
+6
voltage
Gate1 to source cutoff
current
IG1SS
—
Gate2 to source cutoff
current
IG2SS
—
Gate1 to source cutoff
voltage
VG1S(off)
0.5
Gate2 to source cutoff
voltage
VG2S(off)
0.4
Drain current
ID(op)
12
Forward transfer admittance
|yfs|
27
Input capacitance
Output capacitance
Power gain
Noise figure
Ciss
1.2
Coss
0.7
PG
19
NF
—
(Ta = 25°C)
Typ
Max
Unit
Test Conditions
—
—
V ID = 200 µA, VG1S = VG2S = 0
—
—
V IG1 = +10 µA, VG2S = VDS = 0
—
—
V IG2 = +10 µA, VG1S = VDS = 0
—
+100
nA VG1S = +5 V, VG2S = VDS = 0
—
+100
nA VG2S = +5 V, VG1S = VDS = 0
0.8
1.1
V VDS = 5 V, VG2S = 4 V, ID = 100 µA
0.7
1.0
V VDS = 5 V, VG1S = 5 V, ID = 100 µA
16
20
mA VDS = 5 V, VG1 = 5 V, VG2S = 4 V
RG = 100 kΩ
32
38
mS VDS = 5 V, VG1 = 5 V, VG2S = 4 V
RG = 100 kΩ, f = 1 kHz
1.6
2.0
pF VDS = 5 V, VG1 = 5 V, VG2S = 4 V
1.1
1.5
pF RG = 100 kΩ, f = 1 MHz
24
29
dB VDS = 5 V, VG1 = 5V, VG2S = 4 V
1.4
2.1
dB RG = 100 kΩ, f = 900 MHz
Bias Circuit for Operating Items (ID(op), |yfs|, Ciss, Coss, NF, PG)
VG2
Gate 2
RG
VG1
Gate 1
Drain
A
ID
Source
REJ03G1604-0100 Rev.1.00 Nov 26, 2007
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