BB506M Ver la hoja de datos (PDF) - Renesas Electronics

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BB506M

Built in Biasing Circuit MOS FET IC UHF RF Amplifier

Renesas Electronics 

BB506M

S11 Parameter vs. Frequency

.8 1

.6

.4

.2

1.5

2

3

4

5

10

0

.2 .4 .6 .8 1 1.5 2 3 4 5

–.2

–.4

–.6

–.8 –1

–10

–5

–4

–3

–2

–1.5

Test condition: VDS = 5 V, VG1 = 5 V,

VGS2 = 4 V, RG = 100 kΩ

0.05 to 1.05 GHz (0.05 GHz step)

S21 Parameter vs. Frequency

90°

Scale: 5 / div.

120°

60°

150°

30°

180°

0°

–150°

–30°

–120°

–90°

–60°

Test condition: VDS = 5 V, VG1 = 5 V,

VGS2 = 4 V, RG = 100 kΩ

0.05 to 1.05 GHz (0.05 GHz step)

S12 Parameter vs. Frequency

90°

Scale: 0.05 / div.

120°

60°

150°

30°

180°

0°

–150°

–30°

–120°

–90°

–60°

Test condition: VDS = 5 V, VG1 = 5 V,

VGS2 = 4 V, RG = 100 kΩ

0.05 to 1.05 GHz (0.05 GHz step)

S22 Parameter vs. Frequency

.8 1

.6

.4

.2

1.5

2

3

4

5

10

0

.2 .4 .6 .8 1 1.5 2 3 4 5

–.2

–.4

–.6

–.8 –1

–10

–5

–4

–3

–2

–1.5

Test condition: VDS = 5 V, VG1 = 5 V,

VGS2 = 4 V, RG = 100 kΩ

0.05 to 1.05 GHz (0.05 GHz step)

REJ03G1604-0100 Rev.1.00 Nov 26, 2007

Page 6 of 8

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