BD3004HFP Ver la hoja de datos (PDF) - ROHM Semiconductor
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BD3004HFP Datasheet PDF : 9 Pages
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zOperating power supply voltage range (Ta = 25°C)
Parameter
Min.
Max.
Unit
Operating power supply voltage range
5.5*
36**
V
Output current
－
500
mA
* For the output voltage, consider the voltage drop (min. I/O voltage differential) due to the output current.
** Must not exceed Pd.
zElectrical Characteristics (Unless otherwise specified, Ta = −40°C to 125°C, Vcc = 13.5 V)
Parameter
Symbol
Limit
Min.
Typ.
Max.
[Overall]
Total supply current 1
Icc1
—
80
130
Total supply current 2
Icc2
—
80
130
Total supply current 3(BD3005HFP)
Icc3
—
80
130
[Regulator]
Output voltage
VOUT
4.90
5.00
5.10
Input stability
Line.Reg
—
10
20
Load stability
Load.Reg
—
15
30
Min. I/O voltage differential
Output current
Ripple rejection
∆Vd
IOUT
R.R.
—
0.78
1.1
500
—
—
45
55
—
[Reset]
Detection voltage(BD3004HFP)
Vdet
4.02
4.10
4.18
Detection voltage(BD3005HFP)
Vdet
4.40
4.50
4.60
Hysteresis width
VHS
50
100
150
Output delay time Low → High
TdLH
12
21
40
Low output voltage
VRST
—
0.2
0.5
Min. operating voltage
VOPL
1.0
—
—
[Watchdog timer]
High-side switching threshold voltage
VthH
1.16
1.26
1.36
Low-side switching threshold voltage
VthL
0.20
0.24
0.28
Discharge current
Ictc
1
2
3
Charge current
Icto
3
6
10
Watchdog monitor time
TWH
32
51
90
Watchdog reset time
TWL
10
17
30
Clock input pulse width
TWCLK
500
—
—
[INH]
WDT off voltage(BD3005HFP)
VUINH
3.2
—
8.0
WDT on voltage(BD3005HFP)
VLINH
0
—
1.8
*1 TdLH can be varied by changing the CT capacitance value.
TdLH (s) ≈ (1.26 × CT (µF)) / Icto (µA) (Calculation uses Typ. values)
*2 TWH can be varied by changing the CT capacitance value.
TWH (s) ≈ (1.02 × CT (µF)) / Ictc (µA) (Calculation uses Typ. values)
*3 TWL can be varied by changing the CT capacitance value.
TWL (s) ≈ (1.02 × CT (µF)) / Icto (µA) (Calculation uses Typ. values)
Note: This IC is not designed to be radiation-resistant.
Unit
Conditions
µA Io=0mA
µA Io=200mA
µA VINH=0V
V
mV Vcc=6.2～25 V
mV Io=5～200mA
V Vcc=4.75 V, Io=200mA
mA VOUT=4.9V
dB f=120Hz, ein=1Vrms, Io=200mA
V
V
mV
mS CT=0.1µF*1
V IRST=2mA
V
V
V
µA
µA
mS CT=0.1µF*2
mS CT=0.1µF*3
nS
V
V
2/8
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