BF1205C Ver la hoja de datos (PDF) - Philips Electronics
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BF1205C Datasheet PDF : 22 Pages
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Philips Semiconductors
BF1205C
Dual N-channel dual gate MOS-FET
32
ID
(mA)
24
16
8
001aaa562
102
bis, gis
(mS)
10
1
10−1
001aaa564
bis
gis
0
0
20
40
60
gain reduction (dB)
VDS(a) = VDS(b) = 5 V; VG1-S(b) = 0 V; f = 50 MHz;
Tamb = 25 °C; see Figure 33.
Fig 12. Drain current as a function of gain reduction;
typical values.
10−2
10
102
103
f (MHz)
VDS(a) = 5 V; VG2-S(a) = 4 V; VDS(b) = VG1-S(b) = 0 V;
ID(a) = 19 mA.
Fig 13. Input admittance as a function of frequency;
typical values.
102
yfs
(mS)
10
001aaa565 102
yfs
−ϕfs
(deg)
10
−ϕfs
103
yrs
(mS)
102
10
−ϕrs
yrs
001aaa566 103
−ϕrs
(deg)
102
10
1
1
10
102
103
f (MHz)
VDS(a) = 5 V; VG2-S(a) = 4 V; VDS(b) = VG1-S(b) = 0 V;
ID(a) = 19 mA.
Fig 14. Forward transfer admittance and phase as a
function of frequency; typical values.
1
1
10
102
103
f (MHz)
VDS(a) = 5 V; VG2-S(a) = 4 V; VDS(b) = VG1-S(b) = 0 V;
ID(a) = 19 mA.
Fig 15. Reverse transfer admittance and phase as a
function of frequency: typical values.
9397 750 13005
Product data sheet
Rev. 01 — 18 May 2004
© Koninklijke Philips Electronics N.V. 2004. All rights reserved.
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