BS62LV8001EC(2008) Ver la hoja de datos (PDF) - Brilliance Semiconductor

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BS62LV8001EC
(Rev.:2008)

Very Low Power CMOS SRAM 1M X 8 bit

Brilliance Semiconductor 

„ Revision History

Revision No. History

2.2

Add Icc1 characteristic parameter

Improve Iccsb1 spec.

I-grade from 110uA to 50uA at 5.0V

10uA to 8.0uA at 3.0V

C-grade from 55uA to 25uA at 5.0V

5.0uA to 4.0uA at 3.0V

2.3

Change I-grade operation temperature range

- from –25OC to –40OC

Change Iccdr spec.

I-grade from 2.5uA to 4.0uA

C-grade from 1.3uA to 2.0uA

Typical from 0.8 to 0.4uA

2.4

Typical value of standby current is replaced by

maximum value in Featues and Description

section

Remove “-: Normal” (Leaded) PKG Material in

ordering information

BS62LV8001

Draft Date

Jan. 13, 2006

Remark

May. 25, 2006

Oct. 31, 2008

R0201-BS62LV8001

10

Revision 2.4

Oct.

2008

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