BSX46 Ver la hoja de datos (PDF) - Philips Electronics

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BSX46

NPN medium power transistors

Philips Electronics 

Philips Semiconductors

NPN medium power transistors

Product specification

BSX45; BSX46; BSX47

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 134).

SYMBOL

PARAMETER

CONDITIONS

VCBO

VCEO

VEBO

IC

ICM

IBM

Ptot

Tstg

Tj

Tamb

collector-base voltage

BSX45

BSX46

BSX47

collector-emitter voltage

BSX45

BSX46

BSX47

emitter-base voltage

collector current (DC)

peak collector current

peak base current

total power dissipation

storage temperature

junction temperature

operating ambient temperature

open emitter

open base

open collector

Tcase ≤ 25 °C

THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

CONDITIONS

Rth j-a

Rth j-c

thermal resistance from junction to ambient in free air

thermal resistance from junction to case

MIN.

MAX.

UNIT

−

80

V

−

100

V

−

120

V

−

40

V

−

60

V

−

80

V

−

7

V

−

1

A

−

1.5

A

−

200

mA

−

6.25

W

−65

+150

°C

−

200

°C

−65

+150

°C

VALUE

200

28

UNIT

K/W

K/W

1997 Apr 23

3

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