BSX46 Ver la hoja de datos (PDF) - Philips Electronics
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BSX46 Datasheet PDF : 8 Pages
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Philips Semiconductors
NPN medium power transistors
Product specification
BSX45; BSX46; BSX47
CHARACTERISTICS
Tamb = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN. TYP. MAX. UNIT
ICBO
ICBO
IEBO
hFE
hFE
hFE
hFE
VCEsat
VCEsat
VBE
Cc
Ce
fT
F
collector cut-off current
BSX45; BSX46
IE = 0; VCB = 60 V
−
−
30 nA
IE = 0; VCB = 60 V; Tamb = 150 °C
−
−
10 µA
collector cut-off current
BSX47
IE = 0; VCB = 80 V
IE = 0; VCB = 80 V; Tamb = 150 °
−
−
30 nA
−
−
10 µA
emitter cut-off current
DC current gain
BSX45-10; BSX46-10; BSX47-10
IC = 0; VEB = 5 V
IC = 100 µA; VCE = 1 V
−
−
10 nA
15 40 −
BSX45-16; BSX46-16
25 90 −
DC current gain
IC = 100 mA; VCE = 1 V
BSX45-10; BSX46-10; BSX47-10
63 100 160
BSX45-16; BSX46-16; BSX47-16
100 160 250
DC current gain
IC = 500 mA; VCE = 1 V
BSX45-10; BSX46-10; BSX47-10
25 40 −
BSX45-16; BSX46-16
35 60 −
DC current gain
IC = 1 A; VCE = 1 V
BSX45-10; BSX46-10; BSX47-10
−
20 −
BSX45-16; BSX46-16
−
30 −
collector-emitter saturation voltage
BSX45; BSX46
IC = 1 A; IB = 100 mA
−
−
1
V
collector-emitter saturation voltage
BSX47
IC = 500 mA; IB = 25 mA
−
−
900 mV
base-emitter voltage
IC = 100 mA; VCE = 1 V
−
−
1
V
IC = 500 mA; VCE = 1 V
IC = 1 A; VCE = 1 V
0.75 −
−
−
1.5 V
2
V
collector capacitance
IE = ie = 0; VCB = 10 V; f = 1 MHz
BSX45
−
−
25 pF
BSX46
−
−
20 pF
BSX47
−
−
15 pF
emitter capacitance
transition frequency
noise figure
IC = ic = 0; VEB = 0.5 V; f = 1 MHz
−
IC = 50 mA; VCE = 10 V; f = 100 MHz 50
IC = 100 µA; VCE = 5 V; RS = 1 kΩ; −
f = 1 kHz; B = 200 Hz
−
80
−
−
3.5 −
pF
MHz
dB
Switching times (between 10% and 90% levels)
ton
turn-on time
toff
turn-off time
ICon = 100 mA; IBon = 5 mA;
IBoff = −5 mA
−
−
200 ns
−
−
850 ns
1997 Apr 23
4
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