BUW11AW Ver la hoja de datos (PDF) - Philips Electronics
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BUW11AW Datasheet PDF : 12 Pages
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Philips Semiconductors
Silicon diffused power transistors
Product specification
BUW11W; BUW11AW
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
VCESM
VCEO
ICsat
IC
ICM
IB
IBM
Ptot
Tstg
Tj
collector-emitter peak voltage
BUW11W
BUW11AW
collector-emitter voltage
BUW11W
BUW11AW
collector saturation current
BUW11W
BUW11AW
collector current (DC)
collector current (peak value)
base current (DC)
base current (peak value)
total power dissipation
storage temperature
junction temperature
VBE = 0
open base
see Figs 2 and 4
tp < 2 ms; see Fig 2
tp < 2 ms
Tmb ≤ 25 °C; see Fig.3
MIN.
MAX.
UNIT
−
850
V
−
1 000
V
−
400
V
−
450
V
−
3
A
−
2.5
A
−
5
A
−
10
A
−
2
A
−
4
A
−
100
W
−65
+150
°C
−
150
°C
CHARACTERISTICS
Tj = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN. TYP. MAX. UNIT
VCEOsust collector-emitter sustaining voltage IC = 100 mA; IBoff = 0; L = 25 mH;
BUW11W
see Figs 5 and 6
400 −
BUW11AW
450 −
VCEsat
collector-emitter saturation voltage
BUW11W
IC = 3 A; IB = 600 mA; see
Figs 7 and 9
−
−
BUW11AW
IC = 2.5 A; IB = 500 mA; see
Figs 7 and 9
−
−
VBEsat
base-emitter saturation voltage
BUW11W
IC = 3 A; IB = 600 mA; see Fig.7 −
−
BUW11AW
IC = 2.5 A; IB = 500 mA; see Fig.7 −
−
ICES
collector-emitter cut-off current
VCE = VCESMmax; VBE = 0; note 1 −
−
VCE = VCESMmax; VBE = 0;
Tj = 125 °C; note 1
−
−
IEBO
emitter-base cut-off current
VEB = 9 V; IC = 0
−
−
hFE
DC current gain
VCE = 5 V; IC = 5 mA; see Fig.10 10
18
VCE = 5 V; IC = 500 mA;
see Fig.10
10
20
−
V
−
V
1.5 V
1.5 V
1.4 V
1.4 V
1
mA
2
mA
10
mA
35
35
1997 Aug 14
2
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