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BUW11AW

Silicon diffused power transistors

Philips Electronics 

Philips Semiconductors

Silicon diffused power transistors

Product specification

BUW11W; BUW11AW

2.0

handbook, full pagewidth

VBEsat

VCEsat

(V)

1.5

MGB913

1.0

(1)

(2)

0.5

0

10−2

IC/IB = 5.

(1) VBE; Tj = 25 °C.

(2) VBE; Tj = 100 °C.

10−1

(3) VCE; Tj = 25 °C.

(4) VCE; Tj = 25 °C.

(3)

(4)

1

IC (A)

10

Fig.7 Base-emitter and collector-emitter saturation voltages as functions of collector current; typical values.

1.6

handbook, full pagewidth

VBE

(V)

1.4

1.2

1.0

MGB910

(1)

(2)

(3)

0.8

0

Tj = 25 °C.

(1) IC = 5 A.

0.25

0.5

0.75

1.0

1.25

IB (A)

1.5

(2) IC = 3 A.

(3) IC = 1.5 A.

Fig.8 Base-emitter voltage as a function of base current; typical values.

1997 Aug 14

6

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