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BUW12F

Silicon diffused power transistors

Philips Electronics 

Philips Semiconductors

Silicon diffused power transistors

Product specification

BUW12F; BUW12AF

DESCRIPTION

High-voltage, high-speed,

glass-passivated NPN power

transistor in a SOT199 package.

ook, halfpage

APPLICATIONS

• Converters

• Inverters

• Switching regulators

• Motor control systems.

PINNING

PIN

DESCRIPTION

1

base

2

collector

3

emitter

mb mounting base;

electrically isolated

handbook, halfpage

2

1

MBB008

3

12

Front view

3

MSB012

Fig.1 Simplified outline (SOT199) and symbol.

QUICK REFERENCE DATA

SYMBOL

VCESM

VCEO

VCEsat

ICsat

IC

ICM

Ptot

tf

PARAMETER

collector-emitter peak voltage

BUW12F

BUW12AF

collector-emitter voltage

BUW12F

BUW12AF

collector-emitter saturation voltage

collector saturation current

BUW12F

BUW12AF

collector current (DC)

collector current (peak value)

total power dissipation

fall time

CONDITIONS

VBE = 0

open base

see Figs 6 and 10

MAX.

UNIT

850

V

1 000

V

400

V

450

V

1.5

V

6

A

5

A

see Figs 2 and 5

8

A

see Fig 2

20

A

Th ≤ 25 °C; see Fig.4

34

W

resistive load; see Figs 12 and 13 0.8

µs

1997 Aug 14

2

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