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BUW12F

Silicon diffused power transistors

Philips Electronics 

Philips Semiconductors

Silicon diffused power transistors

Product specification

BUW12F; BUW12AF

handbook, full pagewidth

102

IC

(A) ICM max

10 IC max

1

10−1

10−2

δ = 0.01

tp =

20 µs

50 µs

II

100 µs

200 µs

500 µs

I

1 ms

2 ms

5 ms

10 ms

20 ms

DC

MGB916

10−3

BUW12F

BUW12AF

10−4

1

10

102

103 VCE (V) 104

Mounted without heatsink compound and 30 ±5 N force on centre of package.

Tmb < 25 °C.

I - Region of permissible DC operation.

II - Permissible extension for repetitive pulse operation.

Fig.2 Forward bias SOAR.

1997 Aug 14

5

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