BUW12W Ver la hoja de datos (PDF) - Philips Electronics
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BUW12W Datasheet PDF : 12 Pages
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Philips Semiconductors
Silicon diffused power transistors
Product specification
BUW12W; BUW12AW
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
VCESM
VCEO
IC
ICM
IB
IBM
Ptot
Tstg
Tj
collector-emitter peak voltage
BUW12W
BUW12AW
collector-emitter voltage
BUW12W
BUW12AW
collector current (DC)
collector current (peak value)
base current (DC)
base current (peak value)
total power dissipation
storage temperature
junction temperature
VBE = 0
open base
see Figs 2 and 4
tp < 2 ms; see Fig.2
tp ≤ 2 ms
Tmb ≤ 25 °C; see Fig.3
MIN.
MAX.
UNIT
−
850
V
−
1 000
V
−
400
V
−
450
V
−
8
A
−
20
A
−
4
A
−
6
A
−
125
W
−65
+150
°C
−
150
°C
CHARACTERISTICS
Tj = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
VCEOsust
VCEsat
VBEsat
ICES
IEBO
hFE
collector-emitter sustaining voltage IC = 100 mA; IBoff = 0;
BUW12W
L = 25 mH; see Figs 5 and 6
BUW12AW
collector-emitter saturation voltage
BUW12W
IC = 6 A; IB = 1.2 A;
see Figs 7 and 9
BUW12AW
IC = 5 A; IB = 1 A;
see Figs 7 and 9
base-emitter saturation voltage
BUW12W
BUW12AW
collector-emitter cut-off current
IC = 6 A; IB = 1.2 A; see Fig.7
IC = 5 A; IB = 1 A; see Fig.7
VCE = VCESMmax; VBE = 0;
note 1
emitter-base cut-off current
DC current gain
VCE = VCESMmax; VBE = 0;
Tj = 125 °C; note 1
VEB = 9 V; IC = 0
VCE = 5 V; IC = 10 mA;
see Fig.10
VCE = 5 V; IC = 1 A; see Fig.10
MIN.
400
450
−
−
−
−
−
−
−
10
10
TYP.
−
−
−
−
−
−
−
−
−
18
20
MAX. UNIT
−
V
−
V
1.5
V
1.5
V
1.5
V
1.5
V
1
mA
3
mA
10
mA
35
35
1997 Aug 14
2
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