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BUW12W

Silicon diffused power transistors

Philips Electronics 

Philips Semiconductors

Silicon diffused power transistors

Product specification

BUW12W; BUW12AW

handbook, full pagewidth

103

IC

(A)

102

ICM max

10 IC max

(1)

II

1

MGB927

10−1

10−2

10−3

1

I

(2)

III

DC

BUW12W

BUW12AW

IV

10

102

103 VCE (V) 104

Tmb ≤ 25 °C.

I - Region of permissible DC operation.

II - Permissible extension for repetitive pulse operation.

III - Area of permissible operation during turn-on in single transistor converters, provided RBE ≤ 100 Ω and tp ≤ 0.6 µs.

IV - Repetitive pulse operation in this region is permissible provided VBE ≤ 0 and tp ≤ 2 ms.

(1) Ptot max line.

(2) Second breakdown limits.

Fig.2 Forward bias SOAR.

1997 Aug 14

4

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