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BUX46

Silicon NPN Power Transistors

Inchange Semiconductor 

INCHANGE Semiconductor

isc Silicon NPN Power Transistors

isc Product Specification

BUX46/A

DESCRIPTION

·High Switching Speed

·Collector-Emitter Sustaining Voltage-

: VCEO(SUS)= 400V (Min)-BUX46

450V (Min)-BUX46A

APPLICATIONS

·Designed for use in converters, inverters, switching

regulators, motor control systems etc.

ABSOLUTE MAXIMUM RATINGS(Ta=25℃)

SYMBOL

PARAMETER

MAX

UNIT

VCES

Collector- Emitter

Voltage(VBE= 0)

BUX46

850

V

BUX46A 1000

VCEO

Collector-Emitter

Voltage

BUX46

400

V

BUX46A

450

VEBO

IC

ICM

IBB

IBM

PC

Tj

Tstg

Emitter-Base Voltage

Collector Current-Continuous

Collector Current-Peak

Base Current

Base Current-Peak

Collector Power Dissipation

@TC=25℃

Junction Temperature

Storage Temperature Range

5

V

3.5

A

5

A

1.5

A

3

A

85

W

175

℃

-65~175 ℃

THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

MAX UNIT

Rth j-c

Thermal Resistance, Junction to Case

1.75 ℃/W

isc Website：www.iscsemi.cn

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